Visible electroluminescence from Eu:CaF2 layers grown by molecular beam epitaxy on p-Si (100)
Identifieur interne : 001A46 ( France/Analysis ); précédent : 001A45; suivant : 001A47Visible electroluminescence from Eu:CaF2 layers grown by molecular beam epitaxy on p-Si (100)
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Abstract
Visible electroluminescence (EL) is observed at room temperature by current injection into Eu:CaF2 layers containing 7.5 and 8.0 at. % Eu grown by molecular beam epitaxy on lightly doped (100) p-type silicon. The EL spectra are broad with peaks near 700 and 600 nm, respectively. Room temperature photoluminescence spectra for the same samples exhibited peaks near 420 nm, with higher doped samples showing a more pronounced long wavelength tail. Although both metal and indium-tin-oxide (ITO) contacts were successfully used for current injection, the best EL intensity stability was achieved with contacts made of a 100 Å thick Al layer covered by a 2500 Å thick ITO layer. © 1997 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Visible electroluminescence from Eu:CaF<sub>2</sub> layers grown by molecular beam epitaxy on p-Si (100)</title><author><name sortKey="Chatterjee, T" uniqKey="Chatterjee T">T. Chatterjee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Mccann, P J" uniqKey="Mccann P">P. J. Mccann</name></author><author><name sortKey="Fang, X M" uniqKey="Fang X">X. M. Fang</name></author><author><name sortKey="Remington, J" uniqKey="Remington J">J. Remington</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Johnson, M B" uniqKey="Johnson M">M. B. Johnson</name></author><author><name sortKey="Michellon, C" uniqKey="Michellon C">C. Michellon</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Centre Universitaire des Sciences et Techniques (C.U.S.T.), Blaise Pascal University, 63006 Clermont-Ferrand Cedex, France</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Centre Universitaire des Sciences et Techniques (C.U.S.T.), Blaise Pascal University, 63006 Clermont-Ferrand Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Auvergne</region><settlement type="city">Clermont-Ferrand</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0156488</idno><date when="1997-12-22">1997-12-22</date><idno type="stanalyst">PASCAL 98-0156488 AIP</idno><idno type="RBID">Pascal:98-0156488</idno><idno type="wicri:Area/Main/Corpus">017780</idno><idno type="wicri:Area/Main/Repository">017763</idno><idno type="wicri:Area/France/Extraction">001A46</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Calcium compounds</term><term>Electroluminescence</term><term>Epitaxial layers</term><term>Europium</term><term>Experimental study</term><term>Line widths</term><term>Molecular beam epitaxy</term><term>Optical films</term><term>Photoluminescence</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866N</term><term>7860F</term><term>7855H</term><term>8115H</term><term>Etude expérimentale</term><term>Calcium composé</term><term>Europium</term><term>Couche épitaxique</term><term>Film optique</term><term>Electroluminescence</term><term>Photoluminescence</term><term>Epitaxie jet moléculaire</term><term>Largeur raie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Visible electroluminescence (EL) is observed at room temperature by current injection into Eu:CaF<sub>2</sub> layers containing 7.5 and 8.0 at. % Eu grown by molecular beam epitaxy on lightly doped (100) p-type silicon. The EL spectra are broad with peaks near 700 and 600 nm, respectively. Room temperature photoluminescence spectra for the same samples exhibited peaks near 420 nm, with higher doped samples showing a more pronounced long wavelength tail. Although both metal and indium-tin-oxide (ITO) contacts were successfully used for current injection, the best EL intensity stability was achieved with contacts made of a 100 Å thick Al layer covered by a 2500 Å thick ITO layer. © 1997 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>71</s2></fA05><fA06><s2>25</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Visible electroluminescence from Eu:CaF<sub>2</sub> layers grown by molecular beam epitaxy on p-Si (100)</s1></fA08><fA11 i1="01" i2="1"><s1>CHATTERJEE (T.)</s1></fA11><fA11 i1="02" i2="1"><s1>MCCANN (P. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>FANG (X. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>REMINGTON (J.)</s1></fA11><fA11 i1="05" i2="1"><s1>JOHNSON (M. B.)</s1></fA11><fA11 i1="06" i2="1"><s1>MICHELLON (C.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Centre Universitaire des Sciences et Techniques (C.U.S.T.), Blaise Pascal University, 63006 Clermont-Ferrand Cedex, France</s1><sZ>6 aut.</sZ></fA14><fA20><s1>3610-3612</s1></fA20><fA21><s1>1997-12-22</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0156488</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Visible electroluminescence (EL) is observed at room temperature by current injection into Eu:CaF<sub>2</sub> layers containing 7.5 and 8.0 at. % Eu grown by molecular beam epitaxy on lightly doped (100) p-type silicon. The EL spectra are broad with peaks near 700 and 600 nm, respectively. Room temperature photoluminescence spectra for the same samples exhibited peaks near 420 nm, with higher doped samples showing a more pronounced long wavelength tail. 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